On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV _Ga ^2– and the triply positively charged defect complex (AS_Ga+V _As)³⁺, with As_Ga being the antisite defect of an As atom occupying a Ga site andV _As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV _Ga ^2– /(As_Ga+V _As)³⁺ is supposed to be able to pin the GaAs Fermi level at approximately theE _v +0.6 eV level position, which requires that the net free energy of theV _Ga/(As_Ga+V _As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE _v +1.2 eV level position instead of the neededE _v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.     

产生特殊聚焦图形的二元光学元件

通过面积编码将伽博（Gabor)波带片的透过率函数的余弦分布等效为二元分布，研制了能产生各种特殊聚焦图形的二元光学元件。根据透镜聚焦的物理原理制作的二元振幅型波带片可以方便地产生多种聚焦线，给出了相应的实验结果，并讨论了改善聚焦效果的优化条件。     

Activation analysis activities in China

The history, the major achievements in both methodology and application studies, the current trends and the future perspectives of activation analysis in China are biefly described.     

曙光一号自由电子激光器的理论计算

系统总结曙光一号自由电子激光器理论计算的主要结果:包括曙光一号装置主要参数的选取和理解;磁场失谐曲线的计算;常参数摇摆器和变参数摇摆器的主要结果;高阶波导模的贡献;电子束参数扰动对激光性能的影响;空间电荷效应等。计算结果表明,常参数摇摆器激光输出功率可达80MW,效率约50％;变参数摇摆器激光输出功率可达250MW左右,效率约16％。     

反向驱动的异质结有机薄膜电致发光

成功制备了结构为ITO／PDDOPV／PPQ／Al的异质结聚合物发光二极管。该器件在正反向偏压下均可发光。在正向偏压下的光发射主要来自PDDOPV，但在反向偏压下的光发射则包括来自PPQ的蓝光发射和PDDOPV的黄光发射。蓝光强度与黄光强度的比值随着反向偏压的增加而增加，当反向直流电压分别为22V、24V、26V、28V时，其电致发光光谱中PPQ与PDDOPV的峰高比IPPQ／IPDDOPV分别为1．092、1．329、1．605、2．046。换句话说，该器件的发光颜色是压控可调的，这对实现彩色显示是极为有利的。分析了在反向偏压下的发光机理以及IPPQ／IPDDOPV受电压控制的原因。     

Periodic solutions for a quasilinear non-autonomous second-order system

In this paper, a quasilinear second-order system with periodic boundary conditions is studied. By the least action principle and classical theorems of variational calculus, existence results of periodic solutions are obtained.     

Cr掺杂对Nd0.7Sr0.3MnO3电磁性质的影响

我们对多晶样品Nd0.7Sr0.3Mn1-xCrxO3(x≤0.30)进行了X射线衍射谱、电阻温度关系和磁化强度测量.实验发现:随Cr掺杂量的增加,样品的电阻率变大,电阻峰温度和居里温度降低,这是由Cr的介入弱化了双交换作用所致;在x=0.10附近,电阻出现了双峰现象,在其M~T上没有发现与低温峰对应的磁性异常;在锰位磁矩与Cr含量的关系中发现,Cr掺杂对样品的磁性几乎无贡献;通过分析,我们用相分离的图象解释了有关的现象.     

Horizontal Connection and Horizontal Mean Curvature in Carnot Groups

In this paper we give a geometric interpretation of the notion of the horizontal mean curvature which is introduced by Danielli Garofalo-Nhieu and Pauls who recently introduced sub- Riemannian minimal surfaces in Carnot groups. This will be done by introducing a natural nonholonomic connection which is the restriction （projection） of the natural Riemannian connection on the horizontal bundle. For this nonholonomic connection and （intrinsic） regular hypersurfaces we introduce the notions of the horizontal second fundamental form and the horizontal shape operator. It turns out that the horizontal mean curvature is the trace of the horizontal shape operator.     

A MINI MULTI-GAS DETECTION SYSTEM BASED ON INFRARED PRINCIPLE

To counter the problems of gas accidents in coal mines, family safety resulted from using gas, a new infrared detection system with integration and miniaturization has been developed. The infrared detection optics principle used in developing this system is mainly analyzed. The idea that multi gas detection is introduced and guided through analyzing single gas detection is got across. Through researching the design of cell structure, the cell with integration and miniaturization has been devised. The way of data transmission on Controller Area Network (CAN) bus is explained. By taking Single-Chip Microcomputer (SCM) as intelligence handling, the functional block diagram of gas detection system is designed with its hardware and software system analyzed and devised. This system designed has reached the technology requirement of lower power consumption, mini-volume, big measure range, and able to realize multi-gas detection.